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United States Utility Patents 5,352,910 - 5,352,919
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| Number | | Title |
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5,352,910 |
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Semiconductor device with a buffer structure |
|
5,352,911 |
|
Dual base HBT |
|
5,352,912 |
|
Graded bandgap single-crystal emitter heterojunction bipolar transistor |
|
5,352,913 |
|
Dynamic memory storage capacitor having reduced gated diode leakage |
|
5,352,914 |
|
Field-effect transistor with structure for suppressing hot-electron effects, and method of fabricating the transistor |
|
5,352,915 |
|
Semiconductor component having two integrated insulated gate field effect devices |
|
5,352,916 |
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Fully CMOS-type SRAM device with grounding wire having contact holes |
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5,352,917 |
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Electronic device provided with metal fluoride film |
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5,352,918 |
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Capacitative micro-sensor with a low stray capacity and manufacturing method |
|
5,352,919 |
|
Optical integrated semiconductor device |
For U.S. patent law, rules, and procedures see MPEP.
Disclaimer. Information presented on this page while believed to be reliable, is provided "as is" with no warranties of its accuracy or timeliness. For legal advice seek help of a licensed professional.
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